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| PN3644 Discrete POWER & Signal Technologies PN3644 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Collector-Emitter Voltage Value 45 45 5.0 800 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN3644 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation PN3644 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICES IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Base-Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, I C = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 65C VCE = 30 V, IC = 0 45 45 5.0 35 2.0 35 V V V nA A nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 10 V, I C = 0.1 mA VCE = 10 V, I C = 1.0 mA VCE = 10 V, I C = 10 mA VCE = 10 V, I C = 150 mA VCE = 2.0 V, I C = 300 mA VCE = 1.0 V, I C = 50 mA IC = 50 mA, IB = 2.5 mA I C = 150 mA, I B = 15 mA I C = 50 mA, IB = 2.5 mA I C = 150 mA, I B = 15 mA 40 80 100 100 20 80 300 240 0.25 0.4 1.0 1.3 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V V V V SMALL SIGNAL CHARACTERISTICS Cob Cib hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 10 V, f = 140 kHz VBE = 0.5 V, f = 140 kHz IC = 20 mA, VCE = 20 V, f = 100 MHz 2.0 8.0 35 pF pF SWITCHING CHARACTERISTICS ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 30 V, IC = 300 mA I B1 = I B2 = 30 mA VCC = 30 V, IC = 300 mA, IB1 = 30 mA 40 25 35 100 70 50 ns ns ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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